1/8 march 2004 . STP62NS04Z n-channel clamped 12.5m ? - 62a to-220 fully protected mesh overlay? mosfet internal schematic diagram typical r ds (on) = 0.0125 ? 100% avalanche tested low capacitance and gate charge 175 o c maximum junction temperature description this fully clamped mosfet is produced by using the latest advanced company?s mesh overlay process which is based on a novel strip layout. the inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. any other application requiring extra ruggedness is also recommended. applications abs, solenoid drivers power tools ordering information type v dss r ds(on) i d STP62NS04Z clamped <0.015 ? 62 a sales type marking package packaging STP62NS04Z p62ns04z to-220 tube 1 2 3 to-220 absolute maximum ratings ( ?) pulse width limited by safe operating area. (1) i sd 40a, di/dt 100a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 20a, v dd = 20v symbol parameter value unit v ds drain-source voltage (v gs = 0) clamped v v dg drain-gate voltage clamped v v gs gate- source voltage clamped v i d drain current (continuous) at t c = 25c 62 a i d drain current (continuous) at t c = 100c 37.5 a i dg drain gate current (continuous) 50 ma i gs gate sourcecurrent (continuous) 50 ma i dm ( ?) drain current (pulsed) 248 a p tot total dissipation at t c = 25c 110 w derating factor 0.74 w/c dv/dt (1) peak diode recovery voltage slope 8 v/ns e as (2) single pulse avalanche energy 500 mj v esd esd (hbm - c = 100pf, r=1.5 k ? )8kv t stg storage temperature -55 to 175 c t j operating junction temperature
STP62NS04Z 2/8 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose (for 10 sec., 1.6mm from case) max max 1.36 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss clamped voltage i d = 1 ma, v gs = 0 33 v i dss zero gate voltage drain current (v gs = 0) v ds = 16 v 10 a i gss gate-body leakage current (v ds = 0) v gs = 10 v 10 a v gss gate-source breakdown voltage i gs = 100 a 18 v symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v i d = 30 a 12.5 15 m ? symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d =30a 20 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1330 420 135 pf pf pf
3/8 STP62NS04Z switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ? ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20 v i d = 20 a r g =4.7 ? v gs = 10 v (resistive load, figure 3) 13 104 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v i d = 40 a v gs = 10v 34 10 11.5 47 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 20 v i d = 20 a r g =4.7 ? v gs = 10 v (resistive load, figure 3) 41 42 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 30 v i d = 40 a r g =4.7 ?, v gs = 10 v (inductive load, figure 5) 30 54 90 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ?) source-drain current source-drain current (pulsed) 62 248 a a v sd (*) forward on voltage i sd = 62 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 40 a di/dt = 100a/s v dd = 20 v t j = 150c (see test circuit, figure 5) 45 65 2.9 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STP62NS04Z 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 STP62NS04Z normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage temperature. . .
STP62NS04Z 6/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/8 STP62NS04Z dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.10 16.40 16.73 0.633 0.645 0.658 l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
STP62NS04Z 8/8 i nformation furnished is believed to be accurate and reliable. ho wever, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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